Many companies dedicated to the development of computer hardware engage in research work to find new technologies capable of surpassing those currently found in terms of performance and efficiency. And this time, one of those who run the memory sector, Kioxiagot a position to present all his progress in one of the largest technological exhibitions that exist, the IEEE International Electron Devices Meeting (IEDM), where we can see the proposals that they have related to the memory of electronic devices.
There are many extremely important events that allow us to know in detail what we can find in the future, but if we want to talk about it progress technological focused on semiconductors and all their applications, it is clear that one of the most important is the MEI. During this event Kioxia will present three major innovations that will seek to transform the way memory development concepts are applied, namely they will introduce a new type of DRACHMA; MRAM suitable for higher capacities for SCM applications; and a structure of flash memory 3D model with much higher density and performance.
Kioxia seeks to revolutionize memory technologies
From Kioxia They know the current needs in terms of memory, which is why they have worked on three major advances, which they will present during the MEI which will be held from December 7 to 11 in San Francisco, we tell you below what it is about and what new features they will bring.
Oxide semiconductor channel transistor DRAM (OCTRAM)
One of the main aspects the company wants to highlight is that there are ways to improve the performance and efficiency of existing systems, which is why it collaborated with Nanya Technology to develop OCTRAM. This technology consists of a vertical transistor that improves circuit integration by improving the manufacturing process, achieving truly low leakage current by highlighting the properties of the transistor using an oxide semiconductor, which would significantly reduce energy consumption in a wide variety of areas. applications, such as AI systems and IoT products.
High capacity Crosspoint MRAM technology
One of the most important technologies that can be found in AI and big data processing, developed in collaboration with SK Hynix, the objective was to realize a cell read/write operation at a extremely small scale. The biggest problem is that memory reliability tends to degrade as cells get smaller. So they developed a possible solution using a new reading method that significantly reduces this problem.
Next-generation 3D memory technology with horizontal cell stacking structure
Kioxia has developed a new 3D structure to improve reliability and prevent performance degradation of NAND-type cells. Performance degradation generally occurs when the number of stacked layers increases in conventional structures. The new structure arranges NAND cells horizontally by stacking them compared to the conventional structure of vertical arrangement of NAND cells. This structure achieves 3D flash memories with high bit density and reliability at low cost.
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